Mobility of electrons in a semiconductor is d | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(C) The conductivity $\sigma$ of an $n$-type semiconductor is given by $\sigma = ne\mu_e$,where $n$ is the electron density,$e$ is the elementary char

Vedclass · Accepted Answer

$0.4$

Vedclass · Answer

(C) The conductivity $\sigma$ of an $n$-type semiconductor is given by $\sigma = ne\mu_e$,where $n$ is the electron density,$e$ is the elementary charge $(1.6 	imes 10^{-19} \ C)$,and $\mu_e$ is the electron mobility.Given: $n = 10^{19} \ m^{-3}$,$\mu_e = 1.6 \ m^2/(V \cdot s)$,and $e = 1.6 	imes 10^{-19} \ C$.Substituting these values: $\sigma = (10^{19}) 	imes (1.6 	imes 10^{-19}) 	imes (1.6) = 1.6 	imes 1.6 = 2.56 \ \Omega^{-1} \cdot m^{-1}$.The resistivity $ho$ is the reciprocal of conductivity: $ho = \frac{1}{\sigma} = \frac{1}{2.56} \approx 0.39 \ \Omega \cdot m$.Rounding to the nearest option,the value is $0.4 \ \Omega \cdot m$.

Similar Questions

$A$ silicon sample is made into a $p$-type semiconductor by doping. Indium atoms are added at a rate of one atom per $5 \times 10^7$ silicon atoms. If the number density of silicon is $5 \times 10^{28} \text{ atoms/m}^3$,calculate the number density of acceptor atoms per $\text{cm}^3$.

Let $n_e$ be the number density of electrons and $v_d$ be the drift velocity in a semiconductor. When the temperature is increased:

When a semiconductor is doped with donor impurity,

To obtain electrons as majority charge carriers in a semiconductor,the impurity mixed is

Vedclass Test Series

Exam Paper Generator

Online Exam Module