In the working of a photodiode,the reverse current depends on

  • A
    concentration of majority carriers.
  • B
    concentration of minority carriers.
  • C
    applied voltage.
  • D
    recombination of holes and electrons.

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Similar Questions

Consider the following statements $:$
$A.$ The junction area of a solar cell is made very large compared to a photodiode.
$B.$ Solar cells are not connected with any external bias.
$C.$ $\text{LED}$ is made of heavily doped $p-n$ junction.
$D.$ Increase of forward current results in continuous increase of $\text{LED}$ light intensity up to a saturation point.
$E.$ $\text{LED}$ must be connected in forward bias for the emission of light.
Which of the following statements are correct?

An $LED$ is manufactured using zinc selenide; then it emits:

Which type of semiconductor device does not need any bias voltage?

The bandgap of the material of a photodiode is $2.0 \ eV$. What is the minimum frequency of radiation that this material can absorb?

Which of the following statements is true about LEDs?

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