In the following common emitter configuration, an $NPN$ transistor with current gain $\beta = 100$ is used. The output voltage of the amplifier will be

The ratio $(R)$ of output resistance $r_0$ and input resistance $r_i$ in measurements of input and output characteristics of a transistor is typically in the range:

The input resistance of a silicon transistor is $100\,\Omega$. Base current is changed by $40\,\mu A$,which results in a change in collector current by $2\,mA$. This transistor is used as a common emitter amplifier with a load resistance of $4\,k\Omega$. The voltage gain of the amplifier is:

For $I_b = 20 \ \mu A$ and $\beta = 100$,the value of the emitter current is ........ $mA$.

In an $n-p-n$ transistor circuit,the collector current is $10 \, mA$. If $90 \%$ of the electrons reach the collector,then the emitter current will be:

An $NPN$ transistor is used in common emitter configuration as an amplifier with $1\,k\Omega$ load resistance. $A$ signal voltage of $10\,mV$ is applied across the base-emitter. This produces a $3\,mA$ change in the collector current and $15\,\mu A$ change in the base current of the amplifier. The input resistance and voltage gain are: