In an $n$-type semiconductor,electrons are majority charge carriers and holes are minority charge carriers. The charge of an $n$-type semiconductor is

$A$ pure semiconductor has equal electron and hole concentration of $10^{16} \ m^{-3}$. Doping by gallium increases $n_{h}$ to $5 \times 10^{22} \ m^{-3}$. Then,the value of $n_{e}$ in the doped semiconductor is

In a $P$-type semiconductor,the energy level formed in the forbidden gap near the valence band is called ...

$A$ $N-$ type semiconductor is

Write the formula for the total current in an intrinsic semiconductor.

What is the relation between the number density of holes $(n_h)$ and free electrons $(n_e)$ in an intrinsic semiconductor at room temperature?