In a photodiode,the value of the $emf$ produced by a monochromatic light beam is directly proportional to

  • A
    the barrier potential at $p-n$ junction
  • B
    the intensity of light falling on the photodiode
  • C
    the frequency of light falling on the photodiode
  • D
    the voltage applied at the $p-n$ junction

Explore More

Similar Questions

Which one of the following statements is $WRONG$ regarding $LED$?

Assertion $(A)$: $Si$ and $GaAs$ are the preferred materials for solar cells.
Reason $(R)$: Both these materials have energy band gaps much below the energy level corresponding to the maximum solar irradiance in the solar spectrum.

$A$ light emitting diode $(LED)$ has a voltage drop of $2\,V$ across it and passes a current of $10\,mA$ when it operates with a $6\,V$ battery through a limiting resistor $R$. The value of $R$ is $......\,k\Omega$.

Given below are two statements: one is labeled as Assertion $A$ and the other is labeled as Reason $R$.
Assertion $A:$ Photodiodes are used in forward bias usually for measuring the light intensity.
Reason $R:$ For a $p-n$ junction diode, at applied voltage $V$, the current in the forward bias is more than the current in the reverse bias for $|V_z| > |V| \geq V_0$, where $V_0$ is the threshold voltage and $V_z$ is the breakdown voltage.
In the light of the above statements, choose the correct answer from the options given below.

The following graph represents:

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo