In a forward biased PN-junction diode,the pot | vedclass

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(A) In an unbiased $PN$-junction,there is a potential barrier $V_B$ across the junction,where the $P$-side is at a lower potential and the $N$-side is

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(A) In an unbiased $PN$-junction,there is a potential barrier $V_B$ across the junction,where the $P$-side is at a lower potential and the $N$-side is at a higher potential. When the diode is forward biased,an external voltage $V$ is applied such that the $P$-side is connected to the positive terminal and the $N$-side is connected to the negative terminal. This external voltage opposes the built-in potential barrier,effectively reducing the barrier height from $V_B$ to $(V_B - V)$. The potential profile still shows a transition from a lower potential on the $P$-side to a higher potential on the $N$-side,but the overall height of this step is reduced compared to the unbiased case. Among the given options,the graph representing a transition from a lower potential on the $P$-side to a higher potential on the $N$-side is shown in option $A$.

In a forward biased $PN$-junction diode,the potential barrier in the depletion region is of the form...

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