In an unbiased PN-junction,which of the follo | vedclass

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(B) When a $P$-type semiconductor is joined with an $N$-type semiconductor to form a $PN$-junction,electrons diffuse from the $N$-region to the $P$-re

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High potential at $N$ side and low potential at $P$ side.

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(B) When a $P$-type semiconductor is joined with an $N$-type semiconductor to form a $PN$-junction,electrons diffuse from the $N$-region to the $P$-region,and holes diffuse from the $P$-region to the $N$-region.This diffusion creates a depletion layer near the junction.Due to the migration of charge carriers,the $N$-side becomes positively charged relative to the $P$-side,creating an electric field directed from the $N$-side to the $P$-side.Consequently,the $P$-side is at a lower potential and the $N$-side is at a higher potential. This potential difference is known as the barrier potential.

In an unbiased $PN$-junction,which of the following statements regarding the potential across the junction is correct?

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Show the direction of the electric field that arises in a $p-n$ junction.

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Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
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Which of the diode circuits shows the correct biasing used for the measurement of the dynamic resistance of a $p$-$n$ junction diode?

The current in the following circuit is:

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