Which of the diode circuits shows the correct biasing used for the measurement of the dynamic resistance of a $p$-$n$ junction diode?

  • A
    Option A
  • B
    Option B
  • C
    Option C
  • D
    Option D

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The magnitude of the diffusion current in a $p-n$ junction is smaller than the magnitude of the drift current:

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The ratio of the resistance of a $P-N$ junction diode in forward bias to its resistance in reverse bias is approximately:

For a $pn$ junction,the width of the space charge region (depletion layer) is approximately $\qquad$ $\mu m$.

Which of the following components cannot be easily fabricated or obtained from an $IC$ (Integrated Circuit)?

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