In a $P$-type semiconductor,there is

In pure silicon,the electron-hole concentration at $T = 300 \ K$ is $7 \times 10^{15} \ m^{-3}$. Antimony is added as an impurity to silicon at a rate of $1$ atom per $10^7 \ Si$ atoms. Assume that half of the impurity atoms contribute their electrons to the conduction band. Calculate the factor by which the number of charge carriers increases. Given: the number density of silicon atoms is $5 \times 10^{28} \ m^{-3}$.

Explain the recombination coefficient of an intrinsic semiconductor and derive the relation $n_i^2 = n_e n_h$.

$A$ pure semiconductor crystal has $5 \times 10^{22}$ atoms per $cm^3$. It is doped by $1$ ppm concentration of pentavalent element. The number of holes in the doped semiconductor is (given that $n_i = 1.5 \times 10^{10} cm^{-3}$):

The hole and the free electron concentrations in a pure silicon at room temperature are given by $1.4 \times 10^{16} \ m^{-3}$ each under equilibrium. When it is doped with indium and the hole concentration is $n_{h} = 4 \times 10^{22} \ m^{-3}$,the electron concentration is

When a small amount of antimony impurity is added to a germanium crystal,what happens?