If $n_e$ and $v_d$ are the number of electrons and drift velocity in a semiconductor, respectively, what happens when the temperature is increased?

$A$ hole in a $P-$type semiconductor is

In a $p-$type semiconductor,which of the following statements is true?

$A$ pure $Si$ crystal has $4 \times 10^{28}$ atoms per $m^3$. It is doped with $1 \text{ ppm}$ concentration of antimony. The number of free electrons available will be

At a temperature of $500 \ K$,the intrinsic electron number density $(n_e)$ and hole number density $(n_h)$ in a pure semiconductor are equal to $1.5 \times 10^{16} \ m^{-3}$. Now,by adding indium impurity,the hole density $(n_h)$ increases to $4.5 \times 10^{22} \ m^{-3}$. This doped semiconductor is:

Silicon is a semiconductor. If a small amount of $As$ is added to it,then its electrical conductivity . . . . . . .