$A$ hole in a $P-$type semiconductor is

Pure silicon at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. If the hole concentration increases to $3 \times 10^{22} \ m^{-3}$,then the electron concentration in the silicon is

The conductivity of a pure semiconductor can be increased by

$A$ pure semiconductor crystal has $8 \times 10^{28} \text{ atoms/m}^3$. It is doped with a $2 \text{ ppm}$ concentration of pentavalent atoms. The number of holes formed in the semiconductor crystal is (Intrinsic carrier concentration,$n_i = 1 \times 10^{16} \text{ m}^{-3}$).

If one indium atom is doped per $5 \times 10^7$ silicon atoms,and the number density of silicon atoms is $5 \times 10^{28} \, \text{atoms}/\text{m}^3$,find the number density of acceptor atoms in $\text{atoms}/\text{cm}^3$.

Write briefly on $n$-type and $p$-type semiconductors.