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(B) The current in a semiconductor is given by the formula $I = n e A v_d$,where $n$ is the charge carrier concentration,$e$ is the elementary charge,

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$7: 5$

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(B) The current in a semiconductor is given by the formula $I = n e A v_d$,where $n$ is the charge carrier concentration,$e$ is the elementary charge,$A$ is the cross-sectional area,and $v_d$ is the drift velocity.For electrons and holes,the currents are $I_e = n_e e A v_e$ and $I_h = n_h e A v_h$.The ratio of currents is given by $\frac{I_e}{I_h} = \frac{n_e e A v_e}{n_h e A v_h} = \frac{n_e v_e}{n_h v_h} = \frac{7}{4}$.We are given the ratio of drift velocities as $\frac{v_e}{v_h} = \frac{5}{4}$.Substituting this into the ratio equation: $\frac{n_e}{n_h} 	imes \frac{5}{4} = \frac{7}{4}$.Solving for the ratio of concentrations: $\frac{n_e}{n_h} = \frac{7}{4} 	imes \frac{4}{5} = \frac{7}{5}$.Therefore,the ratio of concentrations of electrons and holes is $7: 5$.

If the ratio of electron and hole currents in a semiconductor is $\frac{7}{4}$ and the ratio of drift velocities of electrons and holes is $\frac{5}{4}$,then the ratio of concentrations of electrons and holes will be

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