For the forward biased diode characteristics shown in the figure,the dynamic resistance at $I_{D} = 3 \, \text{mA}$ will be $..... \, \Omega$.

For using a multimeter to identify a diode from electrical components,choose the correct statement about the diode from the following:

In the given circuit,the current flowing through the ideal $P-N$ junction diode is .......$mA$.

In the following circuit,$PN$-junction diodes $D_1$,$D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of equivalent resistance between $A$ and $B$ will be:
$(i) V_A = -10 V, V_B = -5 V$
$(ii) V_A = -5 V, V_B = -10 V$
$(iii) V_A = -4 V, V_B = -12 V$

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?
$(A)$ The width of the zone is independent of the densities of the dopants (impurities).
$(B)$ The width of the zone is dependent on the densities of the dopants.
$(C)$ The electric field in the zone is produced by the ionized dopant atoms.
$(D)$ The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band.

The $I-V$ characteristic of a $p-n$ junction diode is shown in the figure. Find the approximate dynamic resistance of the $p-n$ junction when a forward bias of $1 \text{ V}$ is applied. (in $Omega$)