For an $n-p-n$ transistor structure,which of the following statements is $NOT$ true?
- AEmitter is heavily doped and moderate in size
- BBase is lightly doped and thin in size
- CCollector is lightly doped and large in size
- DCollector is moderately doped and large in size
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Similar Questions
In a transistor in $CE$ configuration,the ratio of power gain to voltage gain is
Medium
View SolutionThe voltage gain and the current amplification factor of a transistor in common emitter configuration are $300$ and $60$ respectively. If the collector resistance is $5 \, k\Omega$, then the base resistance is:
The transfer characteristic curve of a transistor,having input and output resistance $100\,\Omega$ and $100\,k\Omega$ respectively,is shown in the figure. The voltage and power gain are respectively:
DifficultJEE MAIN 2019
View SolutionWhen $n-p-n$ junction transistor is used as an amplifier in common emitter mode,
In an $n-p-n$ transistor,in $CE$ configuration:
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