Consider a situation in which reverse biased current of a particular $P-N$ junction increases when it is exposed to light of wavelength $\lambda \le 621 \, nm$. During this process,enhancement in carrier concentration takes place due to the generation of hole-electron pairs. The value of the band gap is nearly (in $eV$):
- A$1$
- B$4$
- C$2$
- D$0.5$
Explore More
Similar Questions
$A$ photodetector is fabricated from a semiconductor with a band gap $E_g = 0.73 \, eV$. What is the maximum wavelength (in $nm$) it can detect?
Easy
View SolutionWhat kind of diode is used as a photo detector?
Easy
View SolutionFor an $LED$ to emit light in the visible region of the electromagnetic spectrum,it can have an energy band gap in the range of (Planck's constant,$h = 6.6 \times 10^{-34} \ J s$ and speed of light,$c = 3 \times 10^8 \ m s^{-1}$ in vacuum).
On which principle does the $Vidicon$ work?
Easy
View SolutionConsider the following statements $A$ and $B$ and identify the correct answer:
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.
MediumNEET 2024
View SolutionVedclass Products
For Students
Vedclass Test Series
Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.
Start Free TrialFor Teachers
Exam Paper Generator
Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.
Try FreeFor Institutes
Online Exam Module
Live online exams with unlimited students, 360° analytics & white-label branding.
See Demo