The barrier potential of a $P-N$ junction diode does not depend on:

The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is:

If $p-n$ junction diode is reverse biased,then:

The $i-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2 \; V$ is applied is ....... $\Omega$.

$A$ $5 \, V$ battery is connected across the points $X$ and $Y$. Assume $D_{1}$ and $D_{2}$ to be normal silicon diodes. Find the current (in $A$) supplied by the battery if the positive terminal of the battery is connected to point $X$.

The diode used in the circuit shown in the figure has a constant voltage drop of $0.5\; V$ at all currents and a maximum power rating of $100\; mW$. What should be the value of the resistor $R$,connected in series with the diode,to obtain the maximum current? (in $\Omega$)