Avalanche breakdown in a PN junction diode is | vedclass

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(D) Avalanche breakdown in a $PN$ junction occurs due to the cumulative effect of impact ionization. When a high reverse bias voltage is applied,the m

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Cumulative effect of increased electron collision and creation of added electron-hole pairs

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(D) Avalanche breakdown in a $PN$ junction occurs due to the cumulative effect of impact ionization. When a high reverse bias voltage is applied,the minority charge carriers gain sufficient kinetic energy from the electric field. These high-energy carriers collide with valence electrons,knocking them out of their bonds and creating new electron-hole pairs. These newly created carriers are then accelerated by the electric field,leading to further collisions and a rapid,cumulative increase in the number of charge carriers,resulting in a large current.

Avalanche breakdown in a $PN$ junction diode is due to

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