Assertion: $A$ $p-n$ junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason: In a reverse bias condition,the current is small but is more sensitive to changes in incident light intensity.

  • A
    If both Assertion and Reason are correct and the Reason is a correct explanation of the Assertion.
  • B
    If both Assertion and Reason are correct but Reason is not a correct explanation of the Assertion.
  • C
    If the Assertion is correct but Reason is incorrect.
  • D
    If both the Assertion and Reason are incorrect.

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Similar Questions

Identify the correct circuit diagrams for the normal operation from the following.

An $LED$ (Light Emitting Diode) is constructed from a $p-n$ junction based on a certain $Ga-As-P$ semiconducting material whose energy gap is $1.9\, eV$. What is the wavelength of the emitted light?

Consider the following statements $A$ and $B$ and identify the correct answer:
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.

Which type of semiconductor device does not need any bias voltage?

When light shines on a $p-n$ junction diode,the current $I$ versus voltage $V$ is observed as in the figure below. In which quadrant$(s)$ does the diode generate power,so that it can be used as a solar cell?

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