An $LED$ is constructed from a $pn$ junction based on a certain semiconducting material whose energy gap is $1.9 \ eV$. The wavelength of the emitted light is:

  • A
    $2.9 \times 10^{-9} \ m$
  • B
    $1.6 \times 10^{-8} \ m$
  • C
    $6.5 \times 10^{-7} \ m$
  • D
    $9.1 \times 10^{-5} \ m$

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Consider the following statements $A$ and $B$ and identify the correct answer:
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.

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