$A$ semiconductor device is connected in a series circuit with a battery and a resistance. $A$ current is found to pass through the circuit. If the polarity of the battery is reversed,the current drops almost to zero. The device may be
- A$A$ $P-$type semiconductor
- BAn $N-$type semiconductor
- C$A$ $PN-$junction
- DAn intrinsic semiconductor
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Similar Questions
In the case of a $p-n$ junction diode,the width of the depletion region is:
When a $P-N$ junction is in forward bias,what happens to the depletion region and the potential barrier?
Medium
View SolutionFor an ideal diode,in forward and reverse biased condition the resistance is respectively
The barrier potential of a $p-n$ junction depends on:
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?
When a silicon $PN$ junction is in forward biased condition with a series resistance,it has a knee voltage of $0.6\, V$. The current flowing through it is $5\, mA$ when the $PN$ junction is connected to a $2.6\, V$ battery. The value of the series resistance is.....$\Omega$.
Easy
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