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(D) $1$. Arsenic $(Z = 33)$ has five valence electrons,making it a pentavalent impurity (donor). When added to germanium,it creates an $N$-type semico

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$X$ is $N$-type,$Y$ is $P$-type and the junction is reverse biased.

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(D) $1$. Arsenic $(Z = 33)$ has five valence electrons,making it a pentavalent impurity (donor). When added to germanium,it creates an $N$-type semiconductor. Thus,$X$ is $N$-type.$2$. Indium $(Z = 49)$ has three valence electrons,making it a trivalent impurity (acceptor). When added to germanium,it creates a $P$-type semiconductor. Thus,$Y$ is $P$-type.$3$. In the circuit diagram,the $N$-type material $(X)$ is connected to the positive terminal of the battery,and the $P$-type material $(Y)$ is connected to the negative terminal.$4$. When the $N$-side is connected to the positive terminal and the $P$-side is connected to the negative terminal,the $PN$-junction is reverse biased.$5$. Therefore,$X$ is $N$-type,$Y$ is $P$-type,and the junction is reverse biased.

$A$ semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z = 33)$. $A$ second semiconductor $Y$ is made by doping germanium with indium $(Z = 49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

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