In Germanium,the concentration of Aluminum is | vedclass

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(A) Aluminum is a trivalent impurity,so it acts as an acceptor,making the semiconductor $p$-type.Given: Intrinsic carrier concentration $n_i = 10^{19}

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$10^{17} /m^3$

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(A) Aluminum is a trivalent impurity,so it acts as an acceptor,making the semiconductor $p$-type.Given: Intrinsic carrier concentration $n_i = 10^{19} /m^3$ and acceptor concentration $N_A = 10^{21} /m^3$.In a $p$-type semiconductor,the hole concentration $n_h \approx N_A = 10^{21} /m^3$.Using the law of mass action: $n_i^2 = n_h 	imes n_e$.Substituting the values: $(10^{19})^2 = 10^{21} 	imes n_e$.$10^{38} = 10^{21} 	imes n_e$.$n_e = 10^{38} / 10^{21} = 10^{17} /m^3$.Thus,the electron concentration is $10^{17} /m^3$.

In Germanium,the concentration of Aluminum is $\sim 10^{21} \text{ atoms}/m^3$. The intrinsic carrier concentration in the pure semiconductor is $\sim 10^{19} /m^3$. After adding the impurity,what is the electron concentration?

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