Germanium $(Ge)$ is doped with Aluminum $(Al)$. If the concentration of acceptor atoms is $N_A \cong 10^{21} \text{ atoms/m}^3$ and the intrinsic carrier concentration is $n_i = 10^{19} \text{ m}^{-3}$,then the concentration of electrons is:
- A$10^{17} \text{ m}^{-3}$
- B$10^{15} \text{ m}^{-3}$
- C$10^4 \text{ m}^{-3}$
- D$10^2 \text{ m}^{-3}$
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Indium impurity in germanium makes
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View SolutionThe number of silicon atoms per $m^{3}$ is $5 \times 10^{28}$. This is doped simultaneously with $5 \times 10^{22}$ atoms per $m^{3}$ of Arsenic and $5 \times 10^{20}$ atoms per $m^{3}$ of Indium. Calculate the number of electrons and holes. Given that $n_{i} = 1.5 \times 10^{16} \; m^{-3}$. Is the material $n$-type or $p$-type?
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View SolutionAt a temperature of $500 \ K$,the intrinsic electron number density $(n_e)$ and hole number density $(n_h)$ in a pure semiconductor are equal to $1.5 \times 10^{16} \ m^{-3}$. Now,by adding indium impurity,the hole density $(n_h)$ increases to $4.5 \times 10^{22} \ m^{-3}$. This doped semiconductor is:
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Explain $n$-type and $p$-type semiconductors based on energy band theory.
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