For the given circuit,find $V_{AB} = ......V$.

If $p-n$ junction diode is reverse biased,then:

In forward biasing of the $p-n$ junction:

$A$ semiconductor $(Ge - As)$ has an energy gap of $1.43\, eV.$ What is the maximum wavelength emitted when a hole and an electron recombine in such semiconductor in $\mathring{A}$?

Consider a $p-n$ junction as a capacitor,formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this,assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances,then :

Two identical $P-N$ junctions are connected in series with a battery in three ways as shown in the figure. In which two circuits will the potential difference across the $P-N$ junctions be equal?