Consider a p-n junction as a capacitor,formed | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(A) In an $n-p-n$ transistor working in $CE$ configuration,the base-emitter junction is forward-biased,while the collector-emitter junction is reverse

Vedclass · Accepted Answer

$C_1 > C_2$

Vedclass · Answer

(A) In an $n-p-n$ transistor working in $CE$ configuration,the base-emitter junction is forward-biased,while the collector-emitter junction is reverse-biased.The capacitance of a junction is given by $C = \frac{\epsilon A}{d}$,where $d$ is the width of the depletion layer.For a forward-biased junction (base-emitter),the depletion layer width $d_1$ is very small.For a reverse-biased junction (collector-emitter),the depletion layer width $d_2$ is significantly larger.Since $C \propto \frac{1}{d}$,a smaller depletion width results in a larger capacitance.Therefore,$d_1  C_2$.

Similar Questions

The reading of the ammeter for a silicon diode in the given circuit is ....... $mA$.

In an unbiased $P-N$ junction,holes diffuse from the $p-$ region to $n-$ region because

The change in current through a junction diode is $12 \, mA$ when the forward bias voltage is changed by $0.6 \, V$. The dynamic resistance is

In a forward biased $p-n$ junction diode,the potential barrier in the depletion region will be of the form:

Which graph represents the variation of charge density with distance across a $P-N$ junction?

Vedclass Test Series

Exam Paper Generator

Online Exam Module