When a P-N junction is in reverse bias,the cu | vedclass

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(C) In a $P-N$ junction,when it is reverse biased,the potential barrier at the junction increases.This prevents the majority charge carriers (holes in

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Drift of charge carriers

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(C) In a $P-N$ junction,when it is reverse biased,the potential barrier at the junction increases.This prevents the majority charge carriers (holes in $P$-region and electrons in $N$-region) from crossing the junction,effectively stopping the diffusion current.However,the minority charge carriers (electrons in $P$-region and holes in $N$-region) are pushed across the junction by the electric field created by the reverse bias voltage.This movement of minority charge carriers is known as drift current.Therefore,the small reverse saturation current is primarily due to the drift of minority charge carriers.

When a $P-N$ junction is in reverse bias,the current flowing through the junction is primarily due to:

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