Which one of the following statements is false?

  • A
    Pure $Si$ doped with trivalent impurities gives a $p-$type semiconductor.
  • B
    Majority carriers in an $n-$type semiconductor are holes.
  • C
    Minority carriers in a $p-$type semiconductor are electrons.
  • D
    The resistance of an intrinsic semiconductor decreases with an increase in temperature.

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In a $p$-type semiconductor,the acceptor level is at $50 \text{ meV}$ above the valence band. To produce one hole,the maximum wavelength of the light photon required is (Planck's constant,$h = 6.6 \times 10^{-34} \text{ Js}$ and speed of light in vacuum,$c = 3 \times 10^8 \text{ m/s}$) (in $\mu \text{m}$)

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