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(B) $1$. Semiconductor $A$ is doped with arsenic (a pentavalent impurity),making it an $n$-type semiconductor.$2$. Semiconductor $B$ is doped with ind

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(B) $1$. Semiconductor $A$ is doped with arsenic (a pentavalent impurity),making it an $n$-type semiconductor.$2$. Semiconductor $B$ is doped with indium (a trivalent impurity),making it a $p$-type semiconductor.$3$. The junction formed by $A$ ($n$-type) and $B$ ($p$-type) is a $p-n$ junction diode.$4$. In the figure,the positive terminal of the battery is connected to $B$ ($p$-side) and the negative terminal is connected to $A$ ($n$-side). This configuration is forward biasing.$5$. For a forward-biased $p-n$ junction,the current increases exponentially with the applied voltage,as shown in the standard $V-I$ characteristic curve for a diode in the first quadrant.

Two sides of a semiconductor germanium crystal $A$ and $B$ are doped with arsenic and indium respectively. They are connected to a battery as shown in the figure. The correct graph between current and voltage for the arrangement is:

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