The temperature $(T)$ dependence of resistivity $(\rho)$ of a semiconductor is represented by

In an $n$-type silicon,which of the following statements is true?

Let ${n_h}$ and ${n_e}$ be the number of holes and conduction electrons respectively in a semiconductor. Then

For pure $Ge$,the intrinsic carrier density is $10^{19} \ m^{-3}$. If donor impurity is added with a density of $10^{23} \ m^{-3}$,what will be the hole density (in $m^{-3}$)?

Pure $Si$ at $500\,K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\,m^{-3}$. The doped semiconductor is of

$A$ pure semiconductor has equal electron and hole concentration of $10^{16} \ m^{-3}$. Doping by gallium increases $n_{h}$ to $5 \times 10^{22} \ m^{-3}$. Then,the value of $n_{e}$ in the doped semiconductor is