The photocurrent in a photodiode depends on

$A$ $p-n$ photodiode is fabricated from a semiconductor with a band gap of $2.5 \, eV$. It can detect a signal of wavelength:

Why are $Si$ and $GaAs$ preferred materials for solar cells?

Conductivity of a photodiode starts changing only if the wavelength of incident light is < 660 \, nm. The band gap of the photodiode is found to be $\left(\frac{x}{8}\right) eV$. The value of $x$ is: (Given, $h=6.6 \times 10^{-34} \, Js, c=3 \times 10^8 \, m/s, e=1.6 \times 10^{-19} \, C$)

Consider the following statements $:$
$A.$ The junction area of a solar cell is made very large compared to a photodiode.
$B.$ Solar cells are not connected with any external bias.
$C.$ $\text{LED}$ is made of heavily doped $p-n$ junction.
$D.$ Increase of forward current results in continuous increase of $\text{LED}$ light intensity up to a saturation point.
$E.$ $\text{LED}$ must be connected in forward bias for the emission of light.
Which of the following statements are correct?

The symbolic representation of a photodiode is: