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(D) In an intrinsic (undoped) semiconductor,the Fermi level lies in the middle of the forbidden energy gap. This corresponds to sample $X$.In an $n$-t

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sample $X$ is undoped while samples $Y$ and $Z$ have been doped with a fifth group and a third group impurity respectively

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(D) In an intrinsic (undoped) semiconductor,the Fermi level lies in the middle of the forbidden energy gap. This corresponds to sample $X$.In an $n$-type semiconductor,the donor energy level lies just below the conduction band. This corresponds to sample $Y$.In a $p$-type semiconductor,the acceptor energy level lies just above the valence band. This corresponds to sample $Z$.Therefore,sample $X$ is undoped,sample $Y$ is doped with a fifth group impurity ($n$-type),and sample $Z$ is doped with a third group impurity ($p$-type).Thus,the correct assertion is that sample $X$ is undoped while samples $Y$ and $Z$ have been doped with a fifth group and a third group impurity respectively.

The energy band diagrams for three semiconductor samples of silicon are as shown. We can then assert that

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