The diode shown in the circuit is a silicon d | vedclass

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Question

(A) In the given circuit,the positive terminal of the $6 \ V$ battery is connected to the $n$-side of the diode (cathode),and the negative terminal is

Vedclass · Accepted Answer

$6$

Vedclass · Answer

(A) In the given circuit,the positive terminal of the $6 \ V$ battery is connected to the $n$-side of the diode (cathode),and the negative terminal is connected to the $p$-side through the resistor. This configuration means the diode is in reverse bias. In reverse bias,an ideal diode acts as an open circuit,and a real diode acts as a very high resistance. Since there is no current flowing through the circuit,there is no voltage drop across the $2 \ \Omega$ resistor. Therefore,the potential at point $A$ is equal to the potential of the positive terminal of the battery,which is $6 \ V$. Point $B$ is connected to the ground,so its potential is $0 \ V$. The potential difference between points $A$ and $B$ is $V_A - V_B = 6 \ V - 0 \ V = 6 \ V$.

The diode shown in the circuit is a silicon diode. The potential difference between the points $A$ and $B$ will be.....$V$

Similar Questions

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

In a forward-biased $P-N$ junction diode,how does the potential barrier behave?

The diode voltage is $0.5 \ V$ and the maximum power rating is $100 \ mW$. To obtain the maximum current in the circuit,the value of $R$ should be .......... $\Omega$.

Which two important processes occur during the formation of a $p-n$ junction?

Which of the following circuits represents a forward biased diode? Choose the correct answer from the options given below.

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