The circuit has two oppositely connected ideal diodes in parallel. What is the current flowing in the circuit (in $A$)?

$A$ source voltage of $8V$ drives the diode in the figure through a current-limiting resistor of $100 \Omega$. Then the magnitude of the slope of the load line on the $V-I$ characteristics of the diode is

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

In a semiconductor $p-n$ diode,the doping concentrations on $p$-side and $n$-side are $10^{15} \text{ atoms/cm}^3$ and $10^{18} \text{ atoms/cm}^3$,respectively. Which one of the following statements is true?

The characteristic curve of an ideal $p-n$ junction diode is:

In the middle of the depletion layer of a reverse-biased $PN$ junction,the