Pure Si at 500, K has equal number of electro | vedclass

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(B) For an intrinsic semiconductor,the law of mass action states that $n_i^2 = n_e n_h$,where $n_i$ is the intrinsic carrier concentration.Given $n_i

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$p$-type having electron concentration $n_e = 5 	imes 10^9 \,m^{-3}$

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(B) For an intrinsic semiconductor,the law of mass action states that $n_i^2 = n_e n_h$,where $n_i$ is the intrinsic carrier concentration.Given $n_i = 1.5 	imes 10^{16} \,m^{-3}$.After doping with indium (a trivalent impurity),the hole concentration increases to $n_h = 4.5 	imes 10^{22} \,m^{-3}$.Using the relation $n_e = \frac{n_i^2}{n_h}$:$n_e = \frac{(1.5 	imes 10^{16})^2}{4.5 	imes 10^{22}}$$n_e = \frac{2.25 	imes 10^{32}}{4.5 	imes 10^{22}}$$n_e = 0.5 	imes 10^{10} = 5 	imes 10^9 \,m^{-3}$.Since $n_h > n_e$,the semiconductor is $p$-type.

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \,m^{-3}$. The doped semiconductor is of

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