In the reverse biasing of a $p-n$ junction diode,

  • A
    the width of the depletion layer decreases.
  • B
    the width of the depletion layer increases.
  • C
    the number of minority charge carriers increase.
  • D
    the number of majority charge carriers increase.

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Similar Questions

Two $PN$-junctions can be connected in series by three different methods as shown in the figure. If the potential difference across the junctions is the same,then the correct connections will be:

The circuit contains two diodes,each with a forward resistance of $50\, \Omega$ and an infinite reverse resistance. If the battery voltage is $6\, V$,the current through the $120\, \Omega$ resistance is $mA$.

In forward biasing of the $p-n$ junction:

Assuming that the junction diode is ideal, the current in the arrangement shown in the circuit diagram is (in $ mA$)

Two statements are given below:
$A$. When the forward bias voltage across a $p-n$ junction diode increases above a certain threshold voltage,the diode current increases significantly.
$B$. This current is called reverse saturation current.
Choose the correct answer from the options given below:

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