In the given figure,a diode $D$ is connected to an external resistance $R = 100 \,\Omega$ and an $e.m.f.$ of $3.5 \,V$. If the barrier potential developed across the diode is $0.5 \,V$,the current in the circuit will be ........ $mA$.

The ratio of the resistance of a $P-N$ junction diode in forward bias to its resistance in reverse bias is approximately:

The $n$-side of the depletion layer of a $p-n$ junction

If each diode in the figure has a forward bias resistance of $25\,\Omega$ and infinite resistance in reverse bias,what will be the values of the currents $I_1, I_2, I_3,$ and $I_4$?

The voltage-current characteristic of a diode during forward bias is given by $I = 7.8 \times 10^{-5} e^{6.5 V_D}$,where $I$ is the current in $mA$ and $V_D$ is the diode voltage in $V$. Find the dynamic resistance of the diode in $\Omega$,when the current is $4 \ mA$.

The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is: