In extrinsic semiconductors,

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(C) In semiconductors,the energy gap $(E_g)$ between the valence band and the conduction band is small,typically around $1 \ eV$. Extrinsic semiconduc

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The gap between conduction band and valence band is near about $1 \ eV$.

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(C) In semiconductors,the energy gap $(E_g)$ between the valence band and the conduction band is small,typically around $1 \ eV$. Extrinsic semiconductors are formed by doping intrinsic semiconductors (like Silicon or Germanium) with impurities. Doping does not significantly change the band gap of the material; it only introduces new energy levels within the existing band gap. Therefore,the energy gap remains near $1 \ eV$ for extrinsic semiconductors,similar to their intrinsic counterparts. Thus,option $(C)$ is correct.

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