(A) In an $n$-type semiconductor,the majority charge carriers are electrons,which are provided by donor impurity atoms. These donor energy levels are

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in the forbidden energy gap nearer to the conduction band

(A) In an $n$-type semiconductor,the majority charge carriers are electrons,which are provided by donor impurity atoms. These donor energy levels are located just below the conduction band. As the temperature increases,these electrons are excited into the conduction band. Consequently,the Fermi energy level shifts upward and lies in the forbidden energy gap,but closer to the conduction band.

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In an $n$-type semiconductor,the Fermi energy level lies

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in the forbidden energy gap nearer to the conduction band
B
in the forbidden energy gap nearer to the valence band
C
in the middle of forbidden energy gap
D
outside the forbidden energy gap

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In an $n$-type semiconductor,the Fermi energy level lies

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