In the given common emitter transistor circuit,the base current is $I_B = 40 \, \mu A$. Determine the base-emitter voltage $V_{BE}$. (in $, V$)

What is the power gain in a $CE$ amplifier,where the input resistance is $3\,k\Omega$ and the load resistance is $24\,k\Omega$,given $\beta = 20$?

For the given Common Emitter $(CE)$ transistor circuit,the base current is $I_B = 0.04 \text{ mA}$. If the current gain $\beta = 100$ and the collector-emitter voltage $V_{CE} = 12 \text{ V}$,find the value of the collector resistance $R_C$ in $\text{k}\Omega$.

In an $NPN$ transistor,$10^{10}$ electrons enter the emitter region in $10^{-6} \, s$. If $2 \%$ of electrons are lost in the base region,then the collector current and the current amplification factor $(\beta)$ are,respectively:

In an $n-p-n$ transistor, $95 \%$ of emitted electrons reach the collector. If the base current is $2 \text{ mA}$, then the collector current is (in $\text{ mA}$)

Consider the circuit arrangement shown in figure $(1)$ for studying input and output characteristics of an $n-p-n$ transistor in $CE$ configuration. Select the values of $R_B$ and $R_C$ for a transistor whose $V_{BE} = 0.7 \, V$, so that the transistor is operating at point $Q$ as shown in the characteristics shown in figure $(2)$. Given that the input impedance of the transistor is very small and $V_{CC} = V_{BB} = 16 \, V$, also find the voltage gain and power gain of the circuit making appropriate assumptions.