In a P-N junction diode,if the P region is mo | vedclass

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(B) The width of the depletion layer $(W)$ is inversely proportional to the doping concentration $(N)$.Mathematically,the depletion width on the $P$-s

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Greater in the $N$ region

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(B) The width of the depletion layer $(W)$ is inversely proportional to the doping concentration $(N)$.Mathematically,the depletion width on the $P$-side $(W_p)$ and $N$-side $(W_n)$ are related to the doping concentrations ($N_a$ and $N_d$) as $W_p N_a = W_n N_d$.Since the $P$ region is more heavily doped $(N_a > N_d)$,the depletion width must be smaller in the $P$ region and larger in the $N$ region $(W_n > W_p)$.Therefore,the depletion layer extends more into the lightly doped region,which is the $N$ region.

In a $P-N$ junction diode,if the $P$ region is more heavily doped than the $N$ region,then the depletion layer is:

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