In $P$-type semiconductors,the majority and minority charge carriers are respectively:

In a semiconductor,the number density of intrinsic charge carriers at $27^{\circ} \text{C}$ is $1.5 \times 10^{16} \, \text{m}^{-3}$. If the semiconductor is doped with impurity atoms,the hole density increases to $4.5 \times 10^{22} \, \text{m}^{-3}$. The electron density in the doped semiconductor is $..... \times 10^{9} \, \text{m}^{-3}$.

In a pure silicon, the number of electrons and holes per unit volume is $1.6 \times 10^{16} \,m^{-3}$. If silicon is doped with Boron in a way that the hole density increases to $4 \times 10^{22} \,m^{-3}$, then the electron density in the doped semiconductor will be:

The process of adding impurities to a pure semiconductor is called

To a germanium sample,traces of gallium are added as an impurity. The resultant sample would behave like

In an intrinsic semiconductor at room temperature,the number of electrons and holes are