In P-N junction,the barrier potential offers | vedclass

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(A) $P-N$ junction is the interface between $p$-type and $n$-type semiconductors. When both semiconductors are joined,charge carriers diffuse across t

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Free electrons in $N$ region and holes in $P$ region

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(A) $P-N$ junction is the interface between $p$-type and $n$-type semiconductors. When both semiconductors are joined,charge carriers diffuse across the junction. Specifically,electrons from the $n$-region move towards the $p$-region,and holes from the $p$-region move towards the $n$-region. This diffusion leaves behind immobile ionized atoms near the junction,creating a depletion region. The electric field generated by these immobile ions creates a barrier potential. This barrier potential opposes the further diffusion of majority charge carriers (electrons in the $n$-region and holes in the $p$-region) across the junction. Therefore,the barrier potential offers resistance to the free electrons in the $n$-region and holes in the $p$-region.

In $P-N$ junction,the barrier potential offers resistance to

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