If a p-n junction diode is forward biased,the | vedclass

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(B) When a $p-n$ junction diode is forward biased,the positive terminal of the external battery is connected to the $p$-side and the negative terminal

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width of depletion layer decreases.

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(B) When a $p-n$ junction diode is forward biased,the positive terminal of the external battery is connected to the $p$-side and the negative terminal to the $n$-side.This configuration pushes the holes in the $p$-region and electrons in the $n$-region towards the junction.As a result,the majority charge carriers move towards the junction,which effectively reduces the width of the depletion layer.Consequently,the potential barrier height decreases,allowing current to flow easily through the diode.

If a $p-n$ junction diode is forward biased,then:

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