Assume that each diode as shown in the figure has a forward bias resistance of $50 \Omega$ and an infinite reverse bias resistance. The current through the $150 \Omega$ resistance is

$A$ $P-N$ junction is a ............ .

The barrier potential of a $p-n$ junction depends on:
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?

Which of the following statements is not correct when a junction diode is in forward bias?

The current-voltage relation of a diode is given by $I = \left( {{e^{\frac{{1000V}}{T}}} - 1} \right) \, mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \, V$ while measuring the voltage to obtain a current of $5 \, mA$ at $300 \, K$,then the error in the value of the current in $mA$ is.....$mA$

Diffusion current in a $p-n$ junction is greater than the drift current in magnitude when: