An $N-$type and $P-$type silicon can be obtained by doping pure silicon with

An $n$-type and a $p$-type silicon semiconductor can be obtained by doping pure silicon with

$A$ $P-$ type semiconductor can be obtained by adding

For a pure $Si$ crystal at $300 \ K$,the electron $(n_e)$ and hole $(n_h)$ concentrations are equal,being $1.5 \times 10^{16} \ m^{-3}$. On doping with Indium,the hole concentration increases to $4.5 \times 10^{22} \ m^{-3}$. Calculate the new electron concentration $(n_e)$ in the doped $Si$.

In an intrinsic semiconductor,the density of conduction electrons is $7.07 \times 10^{15} \, m^{-3}$. When it is doped with indium,the density of holes becomes $5 \times 10^{22} \, m^{-3}$. Find the density of conduction electrons in the doped semiconductor.

When $Ge$ crystals are doped with phosphorus atoms,then it becomes