$A$ transistor is connected in a common emitter configuration with $R_o = 4 \text{ k}\Omega$,$R_i = 1 \text{ k}\Omega$,$I_C = 1 \text{ mA}$,and $I_b = 20 \text{ }\mu\text{A}$. The voltage gain is:

In a study of a transistor as an amplifier,the ratio of collector current to emitter current is $0.98$. If the collector current is $3 \text{ mA}$,then the base current will be approximately:

The dc common emitter current gain of an $n-p-n$ transistor is $50$. The potential difference applied across the collector and emitter of a transistor used in $CE$ configuration is $V_{CE} = 2 \ V$. If the collector resistance $R_{C} = 4 \ k\Omega$,the base current $(I_{B})$ and the collector current $(I_{C})$ are:

For a transistor,the current ratio $\beta_{dc}$ is defined as the ratio of:

In a transistor amplifier,$\beta = 62$,$R_L = 5000\, \Omega$,and the internal resistance of the transistor is $R_i = 500\, \Omega$. The voltage amplification of the amplifier will be:

In a transistor output characteristic commonly used in common emitter configuration,the base current $I_{B}$,the collector current $I_{C}$,and the collector-emitter voltage $V_{CE}$ have values of the following orders of magnitude in the active region: