Statement-1: The temperature coefficient of r | vedclass

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(D) In an intrinsic semiconductor,the energy gap between the valence band and the conduction band is small. At $T = 0 \ K$,the valence band is complet

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Statement-$1$ is true,Statement-$2$ is true and Statement-$2$ is the correct explanation of Statement-$1$.

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(D) In an intrinsic semiconductor,the energy gap between the valence band and the conduction band is small. At $T = 0 \ K$,the valence band is completely filled and the conduction band is empty,making it an insulator. As the temperature increases,thermal energy allows electrons to jump from the valence band to the conduction band. This increases the number of charge carriers (electrons and holes),which leads to a decrease in electrical resistance. Since resistance decreases with an increase in temperature,the temperature coefficient of resistance is negative. Therefore,Statement-$1$ is true,Statement-$2$ is true,and Statement-$2$ is the correct explanation for Statement-$1$.

$LIST$ $I$	$LIST$ $II$
$A$. Intrinsic Semiconductor	$I$. Fermi-level near conduction band
$B$. $n$-type semiconductor	$II$. Fermi-level at middle
$C$. $p$-type semiconductor	$III$. Fermi-level near valence band
$D$. Metals	$IV$. Fermi-level inside conduction band

Statement-$1$: The temperature coefficient of resistance of an intrinsic semiconductor is negative.
Statement-$2$: As temperature increases,more charge carriers are released into the conduction band.

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Statement-$1$: The temperature coefficient of resistance of an intrinsic semiconductor is negative.Statement-$2$: As temperature increases,more charge carriers are released into the conduction band.