In a $P-N$ junction under reverse bias,the depletion layer contains .......

In a semiconductor diode,the reverse biased current is due to the drift of free electrons and holes caused by:

Which of the following circuits is reverse-biased?

Which of the following circuits is in forward bias?

$A$ $P-N$ junction has a potential barrier of $0.5 \ V$. If the depletion region is $5 \times 10^{-7} \ m$ wide,what will be the intensity of the electric field in this region?

$A$ potential barrier of $0.4 \,V$ exists across a p-n junction. An electron enters the junction from the $n$-side with a speed of $6.0 \times 10^{5} \,ms^{-1}$. The speed with which the electron enters the $p$-side will be $\frac{x}{3} \times 10^{5} \,ms^{-1}$. The value of $x$ is ..............
(Given: mass of electron $= 9 \times 10^{-31} \,kg$,charge on electron $= 1.6 \times 10^{-19} \,C$.)