(A) Given: Potential difference across the diode, $V_D = 0.5 \, V$.Maximum current in forward bias, $i = 20 \, mA = 20 \times 10^{-3} \, A$.The total

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(A) Given: Potential difference across the diode, $V_D = 0.5 \, V$.Maximum current in forward bias, $i = 20 \, mA = 20 \times 10^{-3} \, A$.The total voltage $V$ of the battery is the sum of the potential drop across the resistor $R_S$ and the potential drop across the diode $V_D$.The voltage drop across the series resistor $R_S = 125 \, \Omega$ is given by $V_R = i \times R_S$.$V_R = (20 \times 10^{-3} \, A) \times (125 \, \Omega) = 2.5 \, V$.The total voltage of the battery is $V = V_R + V_D$.$V = 2.5 \, V + 0.5 \, V = 3.0 \, V$.

Class 12 Physics Semiconductor Electronics PN Junction and Diode

Medium

$A$ $p-n$ junction diode can withstand up to $20 \, mA$ current under forward bias. The diode has a potential difference of $0.5 \, V$ across it, which is assumed to be independent of current. What is the maximum voltage of the battery used to forward bias the diode when a resistance of $125 \, \Omega$ is connected in series with it (in $V$)?

TS EAMCET 2020 All TS EAMCET

A
$3.0$
B
$2.5$
C
$3.2$
D
$2.0$

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$A$ $2V$ battery is connected across the points $A$ and $B$ as shown in the figure. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias,the current supplied by the battery when its positive terminal is connected to $A$ is........$A$

Explain the forward and reverse characteristics of the $p-n$ junction diode by drawing the circuit and graph.

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Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.