$A$ metal oxide shows $p-$type semiconductivity. The conductivity of the oxide will increase by:

  • A
    Increasing the pressure of oxygen in contact with the oxide
  • B
    Decreasing the pressure of oxygen in contact with the oxide
  • C
    Conductivity is independent of oxygen pressure
  • D
    Conductivity increases because oxygen forms a $p-n$ junction

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Similar Questions

What causes the formation of a $Schottky$ defect?

Use the appropriate symbols $T$ (True) or $F$ (False) for the following statements regarding defects in solids:
$(1)$ Frenkel defect arises due to the arrangement of cations and anions with a very small difference in size.
$(2)$ Frenkel defect can be called a dislocation defect.
$(3)$ $F$-centers arise due to the migration of electrons released from metal atoms into the crystal lattice.
$(4)$ Physical properties of the crystal do not change due to Schottky defect.

If $NaCl$ is doped with $10^{-4} \ mol \%$ of $SrCl_2,$ the concentration of cation vacancies will be $(N_A = 6.02 \times 10^{23} \ mol^{-1}).$

Which of the following point defects are shown by $AgBr_{(s)}$ crystals?
$A$. Schottky defect
$B$. Frenkel defect
$C$. Metal excess defect
$D$. Metal deficiency defect

What kind of defects do most ionic crystals possess?

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